Semiconducting transparent oxide thin films for the elaboration of p-n junctions

SCHEME: INTER

CALL: 2011

DOMAIN: MS - Materials, Physics and Engineering

FIRST NAME: Damien

LAST NAME: Lenoble

INDUSTRY PARTNERSHIP / PPP: No

INDUSTRY / PPP PARTNER:

HOST INSTITUTION: LIST

KEYWORDS:

START: 2012-02-01

END: 2015-07-31

WEBSITE: https://www.list.lu/

Submitted Abstract

Preparation of high quality transparent p-n junctions films is a key step in the fabrication of transparent electronic devices such as light emitting diodes and flat screens. Presently, the majority of studied Transparent Oxide Semiconductors (TOSs) are n-type semiconductors (ZnO:Al, ITO). Actually, attempts to construct TOSs-based p-n junctions have been mainly hampered by the lack of p-type TOSs with high performances. Recently, the synthesis of p-type TOSs materials (e.g. CuAlO2, CuCrO2) was reported triggering the development of transparent p-n junction-based devices. In such a context, PNOXIDES aims to develop industrially suitable proprietary based methods to synthesize high quality TOS thin films on glass and aluminium substrates. Several synthesis pathways will be explored such as state-of-the-Art Magnetron Sputtering, Chemical Vapor Deposition/Atomic Layer Deposition. A UV-LED device will be elaborated based on those novel synthesis pathways. Its performance will be compared to a counterpart fabricated by pulsed-laser deposition and used as a benchmark. Finally, the PNOXIDES project aims to provide a relevant figure of merit (device performance/manufacturability/costs) to the industrial partners involved in the research consortium.

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